The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 30, 2023

Filed:

Jun. 25, 2020
Applicant:

Infineon Technologies Bipolar Gmbh & Co. Kg., Warstein, DE;

Inventors:

Mario Schenk, Warstein, DE;

Reiner Barthelmess, Soest, DE;

Peter Weidner, Soest, DE;

Dirk Pikorz, Warstein, DE;

Markus Droldner, Ahlen, DE;

Michael Stelte, Borchen-Etteln, DE;

Harald Nübel, Warstein, DE;

Uwe Kellner-Werdehausen, Leutenbach, DE;

Christof Drilling, Winterberg, DE;

Jens Przybilla, Warstein, DE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/74 (2006.01); H01L 29/749 (2006.01); H01L 29/08 (2006.01); H02H 9/04 (2006.01); H01L 29/417 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7424 (2013.01); H01L 29/0839 (2013.01); H01L 29/74 (2013.01); H01L 29/749 (2013.01); H01L 29/7412 (2013.01); H02H 9/041 (2013.01); H01L 29/41716 (2013.01);
Abstract

A short-circuit semiconductor component comprises a semiconductor body, in which a rear-side base region of a first conduction type, an inner region of a second complementary conduction type, and a front-side base region of the first conduction type are disposed. The rear-side base region is electrically connected to a rear-side electrode, and the front-side base region is electrically connected to a front-side electrode. A turn-on structure, which is an emitter structure of the second conduction type, is embedded into the front-side base region and/or rear-side base region and is covered by the respective electrode and is electrically contacted with the electrode placed on the base region respectively embedding it. It can be turned on by a trigger structure which can be activated by an electrical turn-on signal. In the activated state, the trigger structure injects an electrical current surge into the semiconductor body, which irreversibly destroys a semiconductor junction.


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