The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 30, 2023
Filed:
Jul. 02, 2021
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Inventors:
Byounghak Hong, Albany, NY (US);
Seunghyun Song, Albany, NY (US);
Inchan Hwang, Schenectady, NY (US);
Assignee:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/417 (2006.01); H01L 27/088 (2006.01); H01L 21/8234 (2006.01); H01L 29/423 (2006.01); H01L 29/40 (2006.01); H01L 29/08 (2006.01); H01L 29/06 (2006.01);
U.S. Cl.
CPC ...
H01L 29/41775 (2013.01); H01L 21/823425 (2013.01); H01L 21/823475 (2013.01); H01L 27/088 (2013.01); H01L 29/0847 (2013.01); H01L 29/401 (2013.01); H01L 29/41733 (2013.01); H01L 29/42392 (2013.01); H01L 29/0665 (2013.01);
Abstract
Integrated circuit devices may include a lower transistor and an upper transistor stacked on a substrate and may include a conductive contact. The upper transistor may include an upper source/drain region that overlaps a lower source/drain region of the lower transistor. The conductive contact may contact a side surface of the upper source/drain region and may overlap a center portion of the lower source/drain region. The side surface of the upper source/drain region may include a protrusion and a recess.