The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 30, 2023
Filed:
Nov. 21, 2016
Applicant:
Semikron Elektronik Gmbh & Co., KG, Nuremberg, DE;
Inventor:
Wolfgang-Michael Schulz, Zirndorf, DE;
Assignee:
Semikron Elektronik GmbH & Co., KG, N ürnberg, DE;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/00 (2006.01); H01L 23/488 (2006.01);
U.S. Cl.
CPC ...
H01L 24/05 (2013.01); H01L 23/488 (2013.01); H01L 24/03 (2013.01); H01L 24/08 (2013.01); H01L 24/48 (2013.01); H01L 24/85 (2013.01); H01L 24/45 (2013.01); H01L 2224/0345 (2013.01); H01L 2224/0347 (2013.01); H01L 2224/03462 (2013.01); H01L 2224/03823 (2013.01); H01L 2224/04042 (2013.01); H01L 2224/05005 (2013.01); H01L 2224/0508 (2013.01); H01L 2224/0516 (2013.01); H01L 2224/05023 (2013.01); H01L 2224/0558 (2013.01); H01L 2224/0566 (2013.01); H01L 2224/05118 (2013.01); H01L 2224/05124 (2013.01); H01L 2224/05139 (2013.01); H01L 2224/05147 (2013.01); H01L 2224/05155 (2013.01); H01L 2224/05164 (2013.01); H01L 2224/05166 (2013.01); H01L 2224/05171 (2013.01); H01L 2224/05172 (2013.01); H01L 2224/05179 (2013.01); H01L 2224/05184 (2013.01); H01L 2224/05186 (2013.01); H01L 2224/05583 (2013.01); H01L 2224/05618 (2013.01); H01L 2224/05624 (2013.01); H01L 2224/05639 (2013.01); H01L 2224/05644 (2013.01); H01L 2224/05647 (2013.01); H01L 2224/05664 (2013.01); H01L 2224/05666 (2013.01); H01L 2224/05671 (2013.01); H01L 2224/05672 (2013.01); H01L 2224/05679 (2013.01); H01L 2224/05684 (2013.01); H01L 2224/08503 (2013.01); H01L 2224/45005 (2013.01); H01L 2224/45015 (2013.01); H01L 2224/4554 (2013.01); H01L 2224/45147 (2013.01); H01L 2224/4847 (2013.01); H01L 2224/48247 (2013.01); H01L 2224/48506 (2013.01); H01L 2224/48507 (2013.01); H01L 2224/48855 (2013.01); H01L 2224/85205 (2013.01); H01L 2224/85375 (2013.01); H01L 2924/00014 (2013.01);
Abstract
A power semiconductor chip having: a semiconductor component body; a multilayer metallization arranged on the semiconductor component body; and a nickel layer arranged over the semiconductor component body. The invention further relates to a method for producing a power semiconductor chip and to a power semiconductor device. The invention provides a power semiconductor chip which has a metallization to which a copper wire, provided without a thick metallic coating, can be reliably bonded without damage to the power semiconductor chip during bonding.