The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 30, 2023

Filed:

Jul. 12, 2021
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Eui Bok Lee, Seoul, KR;

Donggon Yoo, Incheon, KR;

Wandon Kim, Seongnam-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/522 (2006.01); H01L 29/06 (2006.01); H01L 29/08 (2006.01); H01L 23/528 (2006.01);
U.S. Cl.
CPC ...
H01L 23/5226 (2013.01); H01L 23/5283 (2013.01); H01L 29/0649 (2013.01); H01L 29/0847 (2013.01);
Abstract

A semiconductor device including transistors on a substrate, a first interlayer insulating layer on the transistors, a first lower interconnection line and a second lower interconnection line in an upper portion of the first interlayer insulating layer, a dielectric layer being selectively on a top surface of the first interlayer insulating layer except top surfaces of the first and second lower interconnection lines, an etch stop layer on the first and second lower interconnection lines and the dielectric layer, a second interlayer insulating layer on the etch stop layer, and an upper interconnection line in the second interlayer insulating layer may be provided.


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