The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 30, 2023

Filed:

Mar. 16, 2022
Applicant:

Kabushiki Kaisha Toshiba, Tokyo, JP;

Inventor:

Kazuhito Higuchi, Yokohama, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/288 (2006.01); H01L 21/768 (2006.01); C25D 3/12 (2006.01); C25D 5/02 (2006.01); C25D 3/38 (2006.01); C25D 7/12 (2006.01);
U.S. Cl.
CPC ...
H01L 21/2885 (2013.01); C25D 3/12 (2013.01); C25D 3/38 (2013.01); C25D 5/02 (2013.01); C25D 7/12 (2013.01); H01L 21/76877 (2013.01);
Abstract

According to one embodiment, there is provided a method for manufacturing a semiconductor device. The method includes metal electroplating on a surface of a first electrode formed on a first surface of a semiconductor substrate with a plating solution which contains aggregates of a supercritical fluid and a solution of a plating metal ion and an electrolyte. The first surface includes a recess. The surface is along with a shape of the recess. The recess has a first dimension and a second dimension, and assuming that an aspect ratio of the recess is given as a ratio of the second dimension to the first dimension, a median of a particle size distribution of the aggregates is greater than the first dimension.


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