The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 30, 2023

Filed:

Feb. 04, 2021
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Kevin R. Anglin, Beverly, MA (US);

Simon Ruffell, Hamilton, MA (US);

Kevin Verrier, Hampton, NH (US);

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01J 37/305 (2006.01); H01J 37/304 (2006.01); H01J 37/32 (2006.01);
U.S. Cl.
CPC ...
H01J 37/3053 (2013.01); H01J 37/304 (2013.01); H01J 37/32724 (2013.01); H01J 2237/0203 (2013.01); H01J 2237/3151 (2013.01);
Abstract

A system and method for etching workpieces in a uniform manner are disclosed. The system includes a semiconductor processing system that generates a ribbon ion beam, and a workpiece holder that scans the workpiece through the ribbon ion beam. The workpiece holder includes a portion that extends beyond the workpiece, referred to as a halo. The halo may be independently heated to compensate for etch rate non-uniformities. In some embodiments, the halo may be independently biased such that its potential is different from the potential applied to the workpiece. In certain embodiments, the halo may be divided into a plurality of thermal zones that can be separately controlled. In this way, various etch rate non-uniformities may be addressed by controlling the potential and/or temperature of the various thermal zones of the halo.


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