The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 30, 2023
Filed:
Jun. 02, 2021
Applicant:
International Business Machines Corporation, Armonk, NY (US);
Inventors:
Dimitri Houssameddine, Sunnyvale, CA (US);
Saba Zare, White Plains, NY (US);
Heng Wu, Guilderland, NY (US);
Karthik Yogendra, Albany, NY (US);
Assignee:
International Business Machines Corporation, Armonk, NY (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/04 (2006.01); G11C 11/16 (2006.01); G11C 27/00 (2006.01); H01F 10/32 (2006.01);
U.S. Cl.
CPC ...
G11C 11/161 (2013.01); G11C 11/1673 (2013.01); G11C 11/1675 (2013.01); G11C 27/005 (2013.01); H01F 10/3254 (2013.01); H01F 10/3286 (2013.01); H10N 50/01 (2023.02); H10N 50/80 (2023.02);
Abstract
A memory system may include a magnetic tunnel junction stack, a first high resistance tunnel barrier, and a first voltage controlled magnetic anisotropy write layer. The first voltage controlled magnetic anisotropy write layer may be adjacent the high resistance tunnel barrier, and the voltage controlled magnetic anisotropy write line may include a magnetic material in direct contact with a high resistance tunnel barrier.