The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 30, 2023
Filed:
May. 03, 2021
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Inventors:
Donghwan Kim, Suwon-si, KR;
Woosung Kim, Suwon-si, KR;
Gunwoo Park, Hwaseong-si, KR;
Ki-Bong Seo, Suwon-si, KR;
Jang-Hwan Jeong, Seongnam-si, KR;
Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G03F 1/38 (2012.01); H01L 21/027 (2006.01); H01L 21/768 (2006.01); G03F 7/20 (2006.01);
U.S. Cl.
CPC ...
G03F 1/38 (2013.01); G03F 7/70283 (2013.01); H01L 21/0274 (2013.01); H01L 21/76805 (2013.01); H01L 21/76816 (2013.01); H01L 21/76877 (2013.01); H01L 21/76895 (2013.01);
Abstract
Disclosed are a photomask, an exposure apparatus, and a method of fabricating a three-dimensional semiconductor memory device using the same. The photomask may include a mask substrate, a first mask pattern on the mask substrate, and an optical path modulation substrate. The optical path modulation substrate may include a first region on a portion of the first mask pattern, and a second region on another portion of the first mask pattern. The second region has a thickness that is less than a thickness of the first region.