The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 30, 2023

Filed:

Jan. 29, 2021
Applicant:

Seiko Epson Corporation, Tokyo, JP;

Inventor:

Hiroyuki Oikawa, Chitose, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G02F 1/1368 (2006.01); G02F 1/1362 (2006.01); H01L 29/49 (2006.01); G03B 21/00 (2006.01); H01L 27/12 (2006.01);
U.S. Cl.
CPC ...
G02F 1/1368 (2013.01); G02F 1/136209 (2013.01); G02F 1/136213 (2013.01); G02F 1/136286 (2013.01); G03B 21/006 (2013.01); H01L 27/124 (2013.01); H01L 29/4925 (2013.01);
Abstract

In an electro-optical device, a transistor includes a semiconductor layer extending in a second direction so as to overlap with a scanning line in plan view. A second contact hole for electrically connecting the scanning line with a gate electrode of the transistor is provided in a second interlayer insulating layer provided in a layer between the scanning line and the transistor. The second contact hole includes a first hole portion extending along the second direction on both sides of the semiconductor layer in plan view, and a second hole portion protruding from the first hole portion toward the semiconductor layer and extending along a first direction.


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