The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 30, 2023

Filed:

Aug. 09, 2021
Applicant:

Marvell Asia Pte, Ltd., Singapore, SG;

Inventors:

Jie Lin, Santa Clara, CA (US);

Masaki Kato, Palo Alto, CA (US);

Assignee:

MARVELL ASIA PTE LTD., Singapore, SG;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G02B 6/27 (2006.01); G02B 6/126 (2006.01); G02B 6/12 (2006.01);
U.S. Cl.
CPC ...
G02B 6/276 (2013.01); G02B 6/126 (2013.01); G02B 2006/12061 (2013.01); G02B 2006/12116 (2013.01);
Abstract

A silicon photonic device includes a silicon-on-insulator substrate, a waveguide, and a plate. The silicon-on-insulator substrate includes a silicon layer and a silicon dioxide layer. The waveguide is disposed on the silicon-on-insulator substrate. The silicon dioxide layer at least partially overlays the waveguide. The plate exhibits metallic characteristics and is at least partially embedded in the silicon dioxide layer of the silicon-on-insulator substrate. The plate is spaced apart from the waveguide and is configured to mitigate transverse magnetic emission propagating through the waveguide.


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