The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 30, 2023
Filed:
Dec. 23, 2020
Applicant:
Slt Technologies, Inc, Los Angeles, CA (US);
Inventors:
Mark P. D'Evelyn, Vancouver, WA (US);
Drew W. Cardwell, Camas, WA (US);
Jonathan D. Cook, Santa Barbara, CA (US);
Assignee:
SLT Technologies, Inc, Los Angeles, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C30B 28/04 (2006.01); C30B 7/10 (2006.01); C30B 29/40 (2006.01);
U.S. Cl.
CPC ...
C30B 7/105 (2013.01); C30B 28/04 (2013.01); C30B 29/406 (2013.01);
Abstract
High quality ammonothermal group III metal nitride crystals having a pattern of locally-approximately-linear arrays of threading dislocations, methods of manufacturing high quality ammonothermal group III metal nitride crystals, and methods of using such crystals are disclosed. The crystals are useful for seed bulk crystal growth and as substrates for light emitting diodes, laser diodes, transistors, photodetectors, solar cells, and for photoelectrochemical water splitting for hydrogen generation devices.