The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 30, 2023

Filed:

Apr. 10, 2020
Applicant:

Applied Materials, Inc., Santa Clara, CA (US);

Inventors:

Vahid Firouzdor, Hillsborough, CA (US);

Christopher Laurent Beaudry, San Jose, CA (US);

Hyun-Ho Doh, San Ramon, CA (US);

Joseph Frederick Behnke, San Jose, CA (US);

Joseph Frederick Sommers, San Jose, CA (US);

Assignee:

Applied Materials, Inc., Santa Clara, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 14/08 (2006.01); C04B 35/505 (2006.01); C04B 35/111 (2006.01); H01L 21/67 (2006.01); H01J 37/32 (2006.01); C23C 4/134 (2016.01); C23C 14/00 (2006.01); C23C 14/22 (2006.01); C04B 35/486 (2006.01); C04B 35/622 (2006.01);
U.S. Cl.
CPC ...
C23C 14/083 (2013.01); C04B 35/111 (2013.01); C04B 35/486 (2013.01); C04B 35/505 (2013.01); C04B 35/62222 (2013.01); C23C 4/134 (2016.01); C23C 14/0052 (2013.01); C23C 14/081 (2013.01); C23C 14/221 (2013.01); H01J 37/32495 (2013.01); H01L 21/67213 (2013.01);
Abstract

Described herein is a protective coating composition that provides erosion and corrosion resistance to a coated article (such as a chamber component) upon the article's exposure to harsh chemical environment (such as hydrogen based and/or halogen based environment) and/or upon the article's exposure to high energy plasma. Also described herein is a method of coating an article with the protective coating using electronic beam ion assisted deposition, physical vapor deposition, or plasma spray. Also described herein is a method of processing wafer, which method exhibits, on average, less than about 5 yttrium based particle defects per wafer.


Find Patent Forward Citations

Loading…