The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 23, 2023

Filed:

Mar. 01, 2022
Applicant:

Samsung Display Co., Ltd., Yongin-si, KR;

Inventors:

Myoung Geun Cha, Seoul, KR;

Sang Gun Choi, Suwon-si, KR;

Hye Na Kwak, Hwaseong-si, KR;

Yun Jung Oh, Anyang-si, KR;

Ki Seok Choi, Seoul, KR;

Assignee:

Samsung Display Co., Ltd., Yongin-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 3/044 (2006.01); H01L 27/12 (2006.01); H01L 27/32 (2006.01); H01L 29/786 (2006.01);
U.S. Cl.
CPC ...
H01L 27/3276 (2013.01); G06F 3/0445 (2019.05); H01L 27/323 (2013.01); H01L 27/3262 (2013.01); H01L 27/3265 (2013.01); H01L 27/3272 (2013.01); H01L 27/124 (2013.01); H01L 27/1222 (2013.01); H01L 27/1255 (2013.01); H01L 29/78633 (2013.01); H01L 29/78675 (2013.01);
Abstract

A display device including: a substrate including a main area and a sub-area at a side of the main area; a thin-film transistor on the substrate and positioned in the main area; a first insulating layer on a gate electrode of the thin-film transistor; a light-emitting element on the first insulating layer, positioned in the main area, and electrically connected to the thin-film transistor; a plurality of pads on the first insulating layer and positioned in the sub-area; and a light-blocking layer overlapping the plurality of pads and located between the substrate and the first insulating layer.


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