The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 23, 2023
Filed:
Mar. 04, 2021
Japan Display Inc., Tokyo, JP;
Takeshi Sakai, Tokyo, JP;
JAPAN DISPLAY INC., Tokyo, JP;
Abstract
The semiconductor device includes a first gate electrode, a first gate insulating film, a semiconductor film, a first electrode, a second electrode, a second gate insulating film, and a second gate electrode. The first gate insulating film is located over the first gate electrode. The semiconductor film is located over the first gate insulating film and overlaps with the first gate electrode. The first electrode and the second electrode are each located over and in contact with the semiconductor film. The second gate insulating film is located over the first electrode and the second electrode. The second gate electrode is located over the second gate insulating film and overlaps with the second electrode and the first gate electrode. The first electrode is completely exposed from the second gate electrode.