The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 23, 2023

Filed:

Jul. 14, 2022
Applicant:

Samsung Electro-mechanics Co., Ltd., Suwon-si, KR;

Inventors:

Shinhaeng Heo, Suwon-si, KR;

Byeonghak Jo, Suwon-si, KR;

Wonsun Hwang, Suwon-si, KR;

Hyunjin Yoo, Suwon-si, KR;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H04B 1/44 (2006.01); H03K 17/04 (2006.01); H04B 1/00 (2006.01); H04B 1/401 (2015.01);
U.S. Cl.
CPC ...
H03K 17/04 (2013.01); H04B 1/006 (2013.01); H04B 1/401 (2013.01); H04B 1/44 (2013.01);
Abstract

An RF switch circuit is provided. The RF switch circuit may include a first switch disposed between a transmitting port and an antenna port and including a plurality of first transistors; a second switch disposed between the antenna port and a receiving port and including a plurality of second transistors; and a switch control circuit configured to generate control voltages to control the first transistors and the second transistors, generate a first Off voltage to turn off at least one first transistor among the plurality of first transistors and the plurality of second transistors in a transmitting mode, and generate a second Off voltage to turn off at least one second transistor among the plurality of first transistors and the plurality of second transistors in a receiving mode, wherein the second Off voltage may be higher than the first Off voltage.


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