The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 23, 2023

Filed:

Jul. 02, 2021
Applicant:

Osram Oled Gmbh, Regensburg, DE;

Inventors:

Guido Weiss, Pielenhofen, DE;

Christoph Schwarzmaier, Regensburg, DE;

Dominik Scholz, Bad Abbach, DE;

Nicole Heitzer, Brennberg, DE;

Assignee:

OSRAM OLED GmbH, Regensburg, DE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/62 (2010.01); H01L 23/00 (2006.01); H01L 33/60 (2010.01); C25D 7/12 (2006.01);
U.S. Cl.
CPC ...
H01L 33/62 (2013.01); C25D 7/123 (2013.01); H01L 24/11 (2013.01); H01L 24/13 (2013.01); H01L 33/60 (2013.01); H01L 2224/1147 (2013.01); H01L 2224/11462 (2013.01); H01L 2224/13082 (2013.01); H01L 2224/13166 (2013.01); H01L 2224/13211 (2013.01); H01L 2224/13218 (2013.01); H01L 2224/13224 (2013.01); H01L 2224/13239 (2013.01); H01L 2224/13244 (2013.01); H01L 2224/13247 (2013.01); H01L 2224/13269 (2013.01); H01L 2924/0103 (2013.01); H01L 2924/014 (2013.01); H01L 2924/0105 (2013.01); H01L 2924/01013 (2013.01); H01L 2924/01029 (2013.01); H01L 2924/01047 (2013.01); H01L 2924/01078 (2013.01); H01L 2924/01079 (2013.01); H01L 2933/0058 (2013.01); H01L 2933/0066 (2013.01);
Abstract

A method for producing an optoelectronic component and an optoelectronic component are disclosed. In an embodiment a method includes providing a semiconductor chip having an active region for radiation emission, applying a seed layer on the semiconductor chip, wherein the seed layer includes a first metal and a second metal being different from the first metal, and wherein the second metal is less noble than the first metal, applying a structured photoresist layer directly to the seed layer, applying a solder layer at least to regions of the seed layer which are not covered by the photoresist layer and wherein a proportion of the second metal in the seed layer is between 0.5 wt % and 10 wt %.


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