The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 23, 2023

Filed:

Mar. 19, 2021
Applicant:

Epistar Corporation, Hsinchu, TW;

Inventors:

Chao-Hsing Chen, Hsinchu, TW;

Jia-Kuen Wang, Hsinchu, TW;

Tzu-Yao Tseng, Hsinchu, TW;

Bo-Jiun Hu, Hsinchu, TW;

Tsung-Hsun Chiang, Hsinchu, TW;

Wen-Hung Chuang, Hsinchu, TW;

Kuan-Yi Lee, Hsinchu, TW;

Yu-Ling Lin, Hsinchu, TW;

Chien-Fu Shen, Hsinchu, TW;

Tsun-Kai Ko, Hsinchu, TW;

Assignee:

EPISTAR CORPORATION, Hsinchu, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 33/46 (2010.01); H01L 33/38 (2010.01); H01L 33/40 (2010.01);
U.S. Cl.
CPC ...
H01L 33/46 (2013.01); H01L 33/382 (2013.01); H01L 33/38 (2013.01); H01L 33/405 (2013.01);
Abstract

A light-emitting device includes a semiconductor stack including a first semiconductor layer, a second semiconductor layer, and an active layer between the first semiconductor layer and the second semiconductor layer; one or multiple vias penetrating the active layer and the second semiconductor layer to expose the first semiconductor layer; a first contact layer covering the one or multiple vias; a third insulating layer including a first group of one or multiple third insulating openings on the second semiconductor layer to expose the first contact layer; a first pad on the semiconductor stack and covering the first group of one or multiple third insulating openings; and a second pad on the semiconductor stack and separated from the first pad with a distance, wherein the second pad is formed at a position other than positions of the one or multiple vias in a top view of the light-emitting device.


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