The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 23, 2023

Filed:

Dec. 22, 2021
Applicant:

Osram Oled Gmbh, Regensburg, DE;

Inventors:

Bastian Galler, Regensburg, DE;

Jürgen Off, Regensburg, DE;

Assignee:

OSRAM OLED GmbH, Regensburg, DE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/10 (2010.01); H01L 33/00 (2010.01); H01L 33/02 (2010.01); H01L 33/06 (2010.01); H01L 33/22 (2010.01); H01L 33/32 (2010.01); H01L 33/42 (2010.01); G01N 21/33 (2006.01);
U.S. Cl.
CPC ...
H01L 33/10 (2013.01); H01L 33/0075 (2013.01); H01L 33/025 (2013.01); H01L 33/06 (2013.01); H01L 33/22 (2013.01); H01L 33/325 (2013.01); H01L 33/42 (2013.01); G01N 21/33 (2013.01); H01L 2933/0016 (2013.01);
Abstract

In an embodiment a light emitting diode includes an n-type n-layer, a p-type p-layer and an intermediate active zone configured to generate ultraviolet radiation, a p-type semiconductor contact layer having a varying thickness and a plurality of thickness maxima directly located on the p-layer and an ohmic-conductive electrode layer directly located on the semiconductor contact layer, wherein the n-layer and the active zone are each of AlGaN and the p-layer is of AlGaN or InGaN, wherein the semiconductor contact layer is a highly doped GaN layer, and wherein the thickness maxima have an area concentration of at least 10cm.


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