The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 23, 2023
Filed:
Mar. 19, 2021
Tsinghua University, Beijing, CN;
Hon Hai Precision Industry Co., Ltd., New Taipei, TW;
Tian-Fu Zhang, Beijing, CN;
Li-Hui Zhang, Beijing, CN;
Yuan-Hao Jin, Beijing, CN;
Qun-Qing Li, Beijing, CN;
Shou-Shan Fan, Beijing, CN;
Tsinghua University, Beijing, CN;
HON HAI PRECISION INDUSTRY CO., LTD., New Taipei, TW;
Abstract
A method for making a field effect transistor includes providing a graphene nanoribbon composite structure. The graphene nanoribbon composite structure includes a substrate and a plurality of graphene nanoribbons spaced apart from each other. The plurality of graphene nanoribbons are located on the substrate and extend substantially along a same direction, and each of the plurality of graphene nanoribbons includes a first end and a second end opposite to the first end. A source electrode is formed on the first end, and a drain electrode is formed on the second end. The source electrode and the drain electrode are electrically connected to the plurality of graphene nanoribbons. An insulating layer is formed on the plurality of graphene nanoribbons, and the plurality of graphene nanoribbons are between the insulating layer and the substrate. A gate is formed on a surface of the insulating layer away from the substrate.