The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 23, 2023
Filed:
Sep. 22, 2020
Applicant:
Suzhou Oriental Semiconductor Co., Ltd., Jiangsu, CN;
Assignee:
SUZHOU ORIENTAL SEMICONDUCTOR CO., LTD., Jiangsu, CN;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 29/06 (2006.01); H01L 21/265 (2006.01); H01L 21/306 (2006.01); H01L 21/308 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0634 (2013.01); H01L 21/02532 (2013.01); H01L 21/02579 (2013.01); H01L 21/26513 (2013.01); H01L 21/3081 (2013.01); H01L 21/30604 (2013.01);
Abstract
Disclosed is a method for manufacturing a semiconductor super-junction device. The method includes: a gate is firstly formed in a gate region of a first trench, then an n-type epitaxial layer is etched with a hard mask layer and an insulating side wall covering a side wall of the gate as masks, and a second trench is formed in the n-type epitaxial layer, and then a p-type column is formed in the first trench and the second trench.