The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 23, 2023
Filed:
Feb. 27, 2019
Samsung Electronics Co., Ltd., Suwon-si, KR;
Wook Lee, Suwon-si, KR;
Euiyoung Song, Seoul, KR;
Kwanghee Lee, Seoul, KR;
Uihui Kwon, Hwaseong-si, KR;
Jae Ho Kim, Seoul, KR;
Jungchak Ahn, Yongin-si, KR;
Abstract
An image sensor may include a semiconductor substrate having a light receiving surface thereon and a plurality of spaced-apart semiconductor photoelectric conversion regions at adjacent locations therein. A grating structure is provided on the light receiving surface. This grating structure extends opposite each of the plurality of spaced-apart photoelectric conversion regions. An optically-transparent layer is provided on the grating structure. This grating structure includes a plurality of spaced-apart grating patterns, which can have the same height and the same width. In addition, the grating patterns may be spaced apart from each other by a uniform distance. The grating structure is configured to selectively produce ±1 or higher order diffraction lights to the photoelectric conversion regions, in response to light incident thereon.