The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 23, 2023
Filed:
Oct. 27, 2021
Applicant:
Rohm Co., Ltd., Kyoto, JP;
Inventor:
Takukazu Otsuka, Kyoto, JP;
Assignee:
ROHM CO., LTD., Kyoto, JP;
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/00 (2006.01); H01L 29/739 (2006.01); H01L 29/78 (2006.01); H01L 23/495 (2006.01); H01L 29/417 (2006.01); H01L 25/07 (2006.01); H01L 23/373 (2006.01); H01L 29/12 (2006.01); H01L 29/161 (2006.01); H01L 29/41 (2006.01);
U.S. Cl.
CPC ...
H01L 24/08 (2013.01); H01L 23/3735 (2013.01); H01L 23/4952 (2013.01); H01L 23/49524 (2013.01); H01L 24/03 (2013.01); H01L 24/48 (2013.01); H01L 24/85 (2013.01); H01L 25/072 (2013.01); H01L 29/12 (2013.01); H01L 29/161 (2013.01); H01L 29/41 (2013.01); H01L 29/417 (2013.01); H01L 29/739 (2013.01); H01L 29/78 (2013.01); H01L 24/45 (2013.01); H01L 2224/08501 (2013.01); H01L 2224/40 (2013.01); H01L 2224/45124 (2013.01); H01L 2224/45147 (2013.01); H01L 2224/45565 (2013.01); H01L 2224/45624 (2013.01); H01L 2224/48091 (2013.01); H01L 2224/48624 (2013.01); H01L 2224/48647 (2013.01); H01L 2224/85205 (2013.01); H01L 2924/13055 (2013.01);
Abstract
A semiconductor device includes: a semiconductor chip; and an Ag fired cap formed so as to cover a source pad electrode formed on the semiconductor chip. The semiconductor chip is disposed on a first substrate electrode, and one end of a Cu wire is bonded onto the Ag fired cap by means of an ultrasonic wave. There is provided a semiconductor device capable of improving a power cycle capability, and a fabrication method of such a semiconductor device.