The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 23, 2023
Filed:
May. 03, 2021
Samsung Electronics Co., Ltd., Suwon-si, KR;
Sangmin Yoo, Suwon-si, KR;
Juyoun Kim, Suwon-si, KR;
Hyungjoo Na, Seoul, KR;
Bongseok Suh, Seoul, KR;
Jooho Jung, Suwon-si, KR;
Euichul Hwang, Seoul, KR;
Sungmoon Lee, Suwon-si, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
Abstract
A semiconductor device is provided. The semiconductor device includes a substrate including an active pattern, a gate electrode extending in a first direction and crossing the active pattern which extends in a second direction, a separation structure crossing the active pattern and extending in the first direction, a first gate dielectric pattern disposed on a side surface of the gate electrode, a second gate dielectric pattern disposed on a side surface of the separation structure, and a gate capping pattern covering a top surface of the gate electrode. A level of a top surface of the separation structure is higher than a level of a top surface of the gate capping pattern.