The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 23, 2023
Filed:
Dec. 08, 2021
Nanya Technology Corporation, New Taipei, TW;
Chiang-Lin Shih, New Taipei, TW;
Shing-Yih Shih, New Taipei, TW;
NANYA TECHNOLOGY CORPORATION, New Taipei, TW;
Abstract
A method of forming a semiconductor structure includes following steps. A first wafer is bonded to a second wafer, in which the first wafer includes a first substrate and a first conductive pad above a first surface of the first substrate, and the second wafer comprises a second substrate and a second conductive pad above a second surface of the second substrate. A mask layer is formed above the first substrate. The mask layer and the first substrate are etched to form a first opening in the first substrate. A sacrificial spacer is formed in the first substrate at a sidewall of the first opening. The first conductive pad is etched to form a second opening communicated to the first opening. A conductive material is filled in the first opening and the second opening to form a conductive structure interconnecting the first and second conductive pads.