The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 23, 2023
Filed:
Mar. 25, 2020
Applicant:
Tokai Carbon Korea Co., Ltd, Gyeonggi-do, KR;
Inventor:
Sang Chul Lee, Gyeonggi-do, KR;
Assignee:
TOKAI CARBON KOREA CO., LTD, Gyeonggi-Do, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/32 (2006.01); H01L 21/687 (2006.01); B01J 20/32 (2006.01); B82B 3/00 (2006.01); H01J 37/32 (2006.01); C23C 16/44 (2006.01); H01L 21/02 (2006.01); C30B 23/06 (2006.01); C30B 29/36 (2006.01); H01L 21/324 (2006.01);
U.S. Cl.
CPC ...
H01L 21/68757 (2013.01); B01J 20/3202 (2013.01); B82B 3/0033 (2013.01); C23C 16/325 (2013.01); C23C 16/44 (2013.01); C30B 23/06 (2013.01); C30B 29/36 (2013.01); H01J 37/32724 (2013.01); H01L 21/02167 (2013.01); H01L 21/02529 (2013.01); H01L 21/324 (2013.01);
Abstract
Described herein are an SiC material and a method for manufacturing same. The SiC material includes an SiC layer having a low thermal conductivity region formed in at least a portion thereof, wherein the low thermal conductivity region has an average crystal grain size of 3.5 μm or less and () plane preferential growth according to X-ray diffraction analysis.