The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 23, 2023

Filed:

Apr. 20, 2021
Applicant:

Texas Instruments Incorporated, Dallas, TX (US);

Inventors:

Sebastian Meier, Bavaria, DE;

Helmut Rinck, Bavaria, DE;

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/306 (2006.01); H01L 21/308 (2006.01); C23F 1/44 (2006.01); C23F 1/30 (2006.01); H01L 21/24 (2006.01);
U.S. Cl.
CPC ...
H01L 21/30604 (2013.01); C23F 1/30 (2013.01); C23F 1/44 (2013.01); H01L 21/244 (2013.01); H01L 21/3081 (2013.01);
Abstract

There is provided a method of patterning platinum on a substrate. A platinum layer is deposited on the substrate, and a patterned photoresist layer is formed over the platinum layer leaving partly exposed regions of the platinum layer. An aluminum layer is deposited over the partly exposed regions of the platinum layer. An alloy is formed of aluminum with platinum from the partly exposed regions. The platinum aluminum alloy is etched away leaving a remaining portion of the platinum layer to form a patterned platinum layer on the substrate. In an embodiment, a thin hard mask layer is deposited on the platinum layer on the semiconductor substrate before the patterned photoresist layer is formed.


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