The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 23, 2023

Filed:

Oct. 15, 2020
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Jeonggyu Song, Seongnam-si, KR;

Kyooho Jung, Seoul, KR;

Yongsung Kim, Suwon-si, KR;

Jeongil Bang, Suwon-si, KR;

Jooho Lee, Hwaseong-si, KR;

Junghwa Kim, Yongin-si, KR;

Haeryong Kim, Seunnam-si, KR;

Myoungho Jeong, Seongnam-si, KR;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); H01L 29/786 (2006.01); H01L 29/66 (2006.01); H01L 21/768 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02181 (2013.01); H01L 21/0245 (2013.01); H01L 21/02381 (2013.01); H01L 21/02389 (2013.01); H01L 21/02403 (2013.01); H01L 21/02472 (2013.01); H01L 21/02667 (2013.01); H01L 21/76871 (2013.01); H01L 29/66969 (2013.01); H01L 29/7869 (2013.01);
Abstract

A semiconductor device and a method of manufacturing the semiconductor device are included. The method of manufacturing the semiconductor device includes forming a hafnium oxide layer on a substrate and crystallizing the hafnium oxide layer by using a hafnium cobalt oxide layer as a seed layer. According to the method of manufacturing the semiconductor device, a thin-film hafnium oxide layer may be easily crystallized.


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