The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 23, 2023
Filed:
Sep. 14, 2022
Applicant:
Innolux Corporation, Miao-Li County, TW;
Inventors:
Tsung-Han Tsai, Miao-Li County, TW;
Hsia-Ching Chu, Miao-Li County, TW;
Mei-Chun Shih, Miao-Li County, TW;
Assignee:
INNOLUX CORPORATION, Miao-Li County, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G02F 1/1343 (2006.01); G02F 1/1333 (2006.01); G02F 1/1362 (2006.01); G02F 1/1368 (2006.01); G02F 1/1337 (2006.01);
U.S. Cl.
CPC ...
G02F 1/134309 (2013.01); G02F 1/1368 (2013.01); G02F 1/13439 (2013.01); G02F 1/133345 (2013.01); G02F 1/136286 (2013.01); G02F 1/133707 (2013.01); G02F 1/134363 (2013.01); G02F 1/136227 (2013.01); G02F 2202/10 (2013.01);
Abstract
A thin film transistor substrate comprises: a substrate; a scan line disposed on the substrate and extending along a first direction; a semiconductor layer disposed on the scan line; and a drain electrode disposed on the semiconductor layer and comprising an arc edge outside the scan line, wherein a part of the semiconductor layer extends along a second direction perpendicular to the first direction and the arc edge overlaps the part of the semiconductor layer.