The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 23, 2023
Filed:
Dec. 17, 2020
Method and system for online monitoring of health status of insulated-gate bipolar transistor module
Wuhan University, Hubei, CN;
Yigang He, Hubei, CN;
Weibo Yuan, Hubei, CN;
Guolong Shi, Hubei, CN;
Liulu He, Hubei, CN;
Chaolong Zhang, Hubei, CN;
Bolun Du, Hubei, CN;
WUHAN UNIVERSITY, Hubei, CN;
Abstract
A method and a system for online monitoring of a health status of an insulated-gate bipolar transistor (IGBT) module are provided, which belong to the field of IGBT status monitoring. In order to overcome the inability to real-time monitor health statuses of existing IGBT modules, the method of the disclosure includes the following steps. A current sensor is used to measure a collector current of each IGBT module. A collected current value is substituted into a simulation model to obtain a current imbalance rate. A failure module is located according to the current imbalance rate and temperature to achieve the objective of monitoring an IGBT health status.