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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11655087 B1

PDFFull Text
Date of Patent:
May. 23, 2023

Filed:

Mar. 20, 2019

Barrier resin film, barrier laminate and packaging material using barrier laminate

Applicant:

Dai Nippon Printing Co., Ltd., Tokyo, JP;

Inventors:

Yoshihiro Kishimoto, Tokyo, JP;

Azusa Suzuki, Tokyo, JP;

Assignee:

DAI NIPPON PRINTING CO., LTD., Tokyo, JP;

Attorney:

Hamre, Schumann, Mueller & Larson, P.C.

Primary Examiner:

James C Yager

Int. Cl.
CPC ...
B65D 65/42 (2006.01); C23C 14/02 (2006.01); C23C 14/08 (2006.01); C23C 14/24 (2006.01); B32B 9/00 (2006.01); B32B 27/36 (2006.01); B32B 15/00 (2006.01); B32B 9/04 (2006.01); B32B 15/04 (2006.01); B32B 27/08 (2006.01); B32B 15/08 (2006.01); B32B 15/09 (2006.01);
U.S. Cl.
CPC ...
B65D 65/42 (2013.01); B32B 9/00 (2013.01); B32B 9/041 (2013.01); B32B 15/00 (2013.01); B32B 15/04 (2013.01); B32B 27/08 (2013.01); B32B 27/36 (2013.01); C23C 14/02 (2013.01); C23C 14/081 (2013.01); C23C 14/24 (2013.01); B32B 15/08 (2013.01); B32B 15/09 (2013.01); B32B 2255/10 (2013.01); B32B 2255/20 (2013.01); B32B 2255/26 (2013.01); B32B 2255/28 (2013.01); B32B 2307/31 (2013.01); B32B 2307/724 (2013.01); B32B 2307/7242 (2013.01); B32B 2307/7244 (2013.01); Y10T 428/1352 (2015.01);
Abstract

The present invention addresses the problem of providing a barrier resin film exhibiting excellent barrier properties without adopting a multilayer structure such as the structures used by the prior art. A barrier resin film obtained by forming a vapor-deposited aluminum oxide film on the surface of a resin substrate, wherein an elementally bonded structural unit represented by Alis distributed in the vapor-deposited aluminum oxide film, and the intensity ratio (Al/AlO×100) of the maximum Alconcentration elementally bonded structure section according to Time-of-Flight secondary ion mass spectrometry (TOF-SIMS) is 1-20, inclusive.

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