The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 16, 2023

Filed:

Mar. 26, 2019
Applicant:

Commissariat a L'energie Atomique ET Aux Energies Alternatives, Paris, FR;

Inventor:

François Andrieu, Grenoble, FR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10B 63/00 (2023.01); H01L 21/02 (2006.01); H01L 21/3065 (2006.01); H01L 21/308 (2006.01); H01L 29/06 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01); H01L 29/786 (2006.01); H10N 70/00 (2023.01);
U.S. Cl.
CPC ...
H10B 63/845 (2023.02); H01L 21/02532 (2013.01); H01L 21/02603 (2013.01); H01L 21/308 (2013.01); H01L 21/3065 (2013.01); H01L 29/0673 (2013.01); H01L 29/42392 (2013.01); H01L 29/66742 (2013.01); H01L 29/78618 (2013.01); H01L 29/78696 (2013.01); H10B 63/30 (2023.02); H10N 70/066 (2023.02);
Abstract

A memory device is provided with a support and several superimposed levels of resistive memory cells formed on the support, each level having one or more rows of one or more resistive memory cell(s), each resistive memory cell having a variable resistance memory element formed by an area of variable resistivity material arranged between a first electrode and a second electrode. The memory element is connected to a source region or drain region of a control transistor, the control transistor being formed in a given semiconductor layer of a stack of semiconductor layers formed on the support and wherein respective channel regions of respective control transistors of resist memory cells are arranged.


Find Patent Forward Citations

Loading…