The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 16, 2023

Filed:

Dec. 01, 2021
Applicant:

Panasonic Intellectual Property Management Co., Ltd., Osaka, JP;

Inventors:

Yoshihiro Sato, Osaka, JP;

Junji Hirase, Osaka, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H04N 5/363 (2011.01); H04N 5/378 (2011.01); H04N 5/361 (2011.01); H04N 5/374 (2011.01); H01L 27/146 (2006.01);
U.S. Cl.
CPC ...
H04N 5/363 (2013.01); H01L 27/14603 (2013.01); H01L 27/14612 (2013.01); H01L 27/14623 (2013.01); H01L 27/14636 (2013.01); H01L 27/14638 (2013.01); H01L 27/14665 (2013.01); H04N 5/361 (2013.01); H04N 5/374 (2013.01); H04N 5/378 (2013.01);
Abstract

An imaging device including: a semiconductor substrate; pixels arranged in a first direction; and a signal line that extends in the first direction. Each of the pixels includes: a photoelectric converter that generates signal charge by photoelectric conversion, a region into which the signal charge is input, a first transistor that outputs a signal to the signal line according to an amount of the signal charge input into the region, and a capacity circuit that is coupled to a gate of the first transistor and that includes a first capacitive element, the first capacitive element including a first electrode, a second electrode and a first insulating layer between the first electrode and the second electrode, at least one of the first electrode and the second electrode containing a metal. Further, the signal line is located closer to the semiconductor substrate than the first capacitive element is.


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