The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 16, 2023

Filed:

Jun. 29, 2021
Applicant:

Stmicroelectronics Design and Application S.r.o., Prague, CZ;

Inventor:

Sandor Petenyi, Lysa nad Labem, CZ;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03F 3/45 (2006.01); H03F 1/02 (2006.01); H03F 1/30 (2006.01);
U.S. Cl.
CPC ...
H03F 3/45179 (2013.01); H03F 1/0205 (2013.01); H03F 1/301 (2013.01); H03F 2200/78 (2013.01); H03F 2203/45 (2013.01);
Abstract

A MOSFET has a current conduction path between source and drain terminals. A gate terminal of the MOSFET receives an input signal to facilitate current conduction in the current conduction path as a result of a gate-to-source voltage reaching a threshold voltage. A body terminal of the MOSFET is coupled to body voltage control circuitry that is sensitive to the voltage at the gate terminal of the MOSFET. The body voltage control circuitry responds to a reduction in the voltage at the gate terminal of the MOSFET by increasing the body voltage of the MOSFET at the body terminal of the MOSFET. As a result, there is reduction in the threshold voltage. The circuit configuration is applicable to amplifier circuits, comparator circuits and current mirror circuits.


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