The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 16, 2023
Filed:
Jun. 12, 2020
Applicant:
William Marsh Rice University, Houston, TX (US);
Inventors:
Bob Yi Zheng, Houston, TX (US);
Hangqi Zhao, Houston, TX (US);
Benjamin Cerjan, Houston, TX (US);
Mehbuba Tanzid, Houston, TX (US);
Peter J. Nordlander, Houston, TX (US);
Nancy J. Halas, Houston, TX (US);
Assignee:
William Marsh Rice University, Houston, TX (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/101 (2006.01); G01J 5/20 (2006.01); G01J 5/00 (2022.01);
U.S. Cl.
CPC ...
H01L 31/101 (2013.01); G01J 5/20 (2013.01); G01J 2005/0077 (2013.01);
Abstract
An infrared photodetector includes: a p-type and highly-doped silicon substrate; a metal structure disposed on the silicon substrate; a first electric contact to the silicon substrate; and a second electric contact to the metal structure.