The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 16, 2023
Filed:
May. 11, 2020
Semiconductor Components Industries, Llc, Phoenix, AZ (US);
Wonhwa Lee, Bucheon-si, KR;
Gary H. Loechelt, Tempe, AZ (US);
SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC, Scottsdale, AZ (US);
Abstract
A method of forming a power semiconductor device includes providing an epi layer over a substrate; forming a well at an upper portion of the epi layer; forming a pillar below the well and spaced apart from the well to define a Schottky contact region; etching a trench into the epi layer, the trench having a sidewall and a base, a portion of the sidewall of the trench corresponding to the Schottky contact region; forming a metal contact layer over the sidewall and the base of the trench, the metal contact layer forming a Schottky interface with the epi layer at the Schottky contact region; and forming a gate electrode and first and second electrodes.