The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 16, 2023
Filed:
Aug. 06, 2018
Sumitomo Chemical Company, Limited, Tokyo, JP;
Kuniyuki Kakushima, Yokohama, JP;
Takuya Hoshii, Yokohama, JP;
Hitoshi Wakabayashi, Yokohama, JP;
Kazuo Tsutsui, Yokohama, JP;
Hiroshi Iwai, Yokohama, JP;
Taiki Yamamoto, Hitachi, JP;
SUMITOMO CHEMICAL COMPANY, LIMITED, Tokyo, JP;
Abstract
Provided are a charge trap evaluation method and semiconductor device including, in an embodiment, a step for applying an initialization voltage that has the same sign as a threshold voltage and is greater than or equal to the threshold voltage between the source electrodeand drain electrodeof a semiconductor devicehaving an HEMT structure and the substrateof the semiconductor deviceand initializing a trap state by forcing out trapped charge from a trap level and a step for monitoring the current flowing between the source electrodeand drain electrodeafter the trap state initialization and evaluating at least one from among charge trapping, current collapse, and charge release.