The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 16, 2023
Filed:
May. 26, 2021
Infineon Technologies Austria Ag, Villach, AT;
Ingo Muri, Villach, AT;
Felix Schubert, Dresden, DE;
Daniel Tutuc, St. Niklas an der Drau, AT;
Hans Weber, Bayerisch Gmain, DE;
Infineon Technologies Austria AG, Villach, AT;
Abstract
A method for producing a semiconductor device includes forming transistor cells in a semiconductor body, each cell including a drift region separated from a source region by a body region, a gate electrode dielectrically insulated from the body region, and a compensation region of a doping type complementary to the doping type of the drift region and extending from a respective body region into the drift region in a vertical direction. Forming the drift and compensation regions includes performing a first implantation step, thereby implanting first and second type dopant atoms into the semiconductor body, wherein an implantation dose of at least one of the first type dopant atoms and the second type dopant atoms for each of at least two sections of the semiconductor body differs from the implantation dose of the corresponding type of dopant atoms of at least one other section of the at least two sections.