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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11652100 B1

PDFFull Text
Date of Patent:
May. 16, 2023

Filed:

May. 07, 2021

Semiconductor device and method of manufacturing the same

Applicant:

Renesas Electronics Corporation, Tokyo, JP;

Inventors:

Hiroyoshi Kudou, Tokyo, JP;

Taro Moriya, Tokyo, JP;

Satoshi Uchiya, Tokyo, JP;

Assignee:

RENESAS ELECTRONICS CORPORATION, Tokyo, JP;

Attorney:

McDermott Will & Emery LLP

Primary Examiner:

Joseph C Nicely

Int. Cl.
CPC ...
H01L 27/06 (2006.01); H01L 21/265 (2006.01); H01L 27/02 (2006.01); H01L 29/66 (2006.01); H01L 29/16 (2006.01); H01L 29/861 (2006.01); H01L 29/06 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0629 (2013.01); H01L 21/265 (2013.01); H01L 27/0255 (2013.01); H01L 29/0657 (2013.01); H01L 29/0692 (2013.01); H01L 29/16 (2013.01); H01L 29/66128 (2013.01); H01L 29/66136 (2013.01); H01L 29/66734 (2013.01); H01L 29/861 (2013.01); H01L 29/8611 (2013.01); H01L 29/66621 (2013.01); H01L 29/7813 (2013.01);
Abstract

A semiconductor device has a silicon film for a diode formed on a semiconductor substrate via an insulating film, and first and second wirings formed on an upper layer of the silicon film. The silicon film has a p-type silicon region and a plurality of n-type silicon regions, and each of the plurality of n-type silicon regions is surrounded by the p-type silicon region in a plan view. The p-type silicon region is electrically connected to the first wiring, and the plurality of n-type silicon regions are electrically connected to the second wiring.

Find Patent Forward Citations

Kudou, Hiroyoshi. (2023). Semiconductor device and method of manufacturing the same (U.S. Patent No. 11652100). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11652100

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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