The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 16, 2023
Filed:
Jan. 06, 2021
Joulwatt Technology (Hangzhou) Co., Ltd., Hangzhou, CN;
Weihuai Wang, Hangzhou, CN;
Yang Lu, Hangzhou, CN;
JOULWATT TECHNOLOGY (HANGZHOU) CO., LTD., Hangzhou, CN;
Abstract
Disclosed are a transistor structure for electrostatic protection and a method for manufacturing the same. The transistor structure comprises: a doped region in a substrate; field oxide layers; a first N-type well region, a P-type well region and a second N-type well region in the doped region and spaced in sequence; a first polycrystalline silicon layer and a second polycrystalline silicon layer covering part of the P-type well region; a first N+ region and a first P+ region respectively formed in the first N-type well region and the second N-type well region second P+ region and the second N+ region are close to the first N+ region and the first P+ region, respectively. The structure may change a current path under forward/reverse operation; thus, a device keeps a good electrostatic protection capability and high robustness.