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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11652072 B1

PDFFull Text
Date of Patent:
May. 16, 2023

Filed:

Apr. 08, 2021

Semiconductor device and method of manufacturing the same

Applicant:

Renesas Electronics Corporation, Tokyo, JP;

Inventors:

Takashi Tonegawa, Ibaraki, JP;

Hiroshi Inagawa, Ibaraki, JP;

Assignee:

RENESAS ELECTRONICS CORPORATION, Tokyo, JP;

Attorney:

McDermott Will & Emery LLP

Primary Examiner:

Shih Tsun A Chou

Int. Cl.
CPC ...
H01L 29/04 (2006.01); H01L 23/00 (2006.01); H01L 29/78 (2006.01); H01L 29/66 (2006.01); H01L 29/861 (2006.01); H01L 29/45 (2006.01); H01L 23/495 (2006.01); H01L 21/3065 (2006.01); H01L 21/02 (2006.01); H01L 21/78 (2006.01); H01L 25/18 (2023.01); H01L 29/739 (2006.01); H01L 29/417 (2006.01);
U.S. Cl.
CPC ...
H01L 24/05 (2013.01); H01L 23/49524 (2013.01); H01L 23/49562 (2013.01); H01L 23/49575 (2013.01); H01L 24/03 (2013.01); H01L 29/045 (2013.01); H01L 29/456 (2013.01); H01L 29/66136 (2013.01); H01L 29/66712 (2013.01); H01L 29/66727 (2013.01); H01L 29/66734 (2013.01); H01L 29/7802 (2013.01); H01L 29/7813 (2013.01); H01L 29/861 (2013.01); H01L 21/0206 (2013.01); H01L 21/3065 (2013.01); H01L 21/78 (2013.01); H01L 25/18 (2013.01); H01L 29/41741 (2013.01); H01L 29/41766 (2013.01); H01L 29/7395 (2013.01); H01L 2224/0345 (2013.01); H01L 2224/0362 (2013.01); H01L 2224/0381 (2013.01); H01L 2224/03452 (2013.01); H01L 2224/03464 (2013.01); H01L 2224/03614 (2013.01); H01L 2224/05084 (2013.01); H01L 2224/05124 (2013.01); H01L 2224/05138 (2013.01); H01L 2224/05147 (2013.01); H01L 2224/05187 (2013.01); H01L 2224/05573 (2013.01); H01L 2224/05644 (2013.01); H01L 2224/05655 (2013.01); H01L 2224/05664 (2013.01); H01L 2224/32245 (2013.01); H01L 2224/33181 (2013.01); H01L 2224/40137 (2013.01); H01L 2224/40247 (2013.01); H01L 2924/05432 (2013.01); H01L 2924/1203 (2013.01); H01L 2924/13055 (2013.01); H01L 2924/13091 (2013.01); H01L 2924/2064 (2013.01); H01L 2924/20105 (2013.01); H01L 2924/35121 (2013.01);
Abstract

To improve reliability of a semiconductor device. There are provided the semiconductor device and a method of manufacturing the same, the semiconductor including a pad electrode that is formed over a semiconductor substrate and includes a first conductive film and a second conductive film formed over the first conductive film, and a plating film that is formed over the second conductive film and used to be coupled to an external connection terminal (TR). The first conductive film and the second conductive film contains mainly aluminum. The crystal surface on the surface of the first conductive film is different from the crystal surface on the surface of the second conductive film.

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