The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 16, 2023
Filed:
Jun. 17, 2021
Wonik Ips Co., Ltd., Pyeongtaek-si Gyeonggi-do, KR;
Jae Jung Moon, Suwon-si Gyeonggi-do, KR;
Young Chul Choi, Hwaseong-si Gyeonggi-do, KR;
Dong Hak Kim, Hwaseong-si Gyeonggi-do, KR;
WONIK IPS CO., LTD., Pyeongtaek-si, KR;
Abstract
The present invention relates to a method for forming an amorphous silicon thin film, a method for manufacturing a semiconductor device including the same, and a semiconductor device manufactured thereby. The present invention discloses a method for forming an amorphous silicon thin film, wherein the method includes a first step (S) of providing a first gas containing silicon and a second gas containing nitrogen on a substrate () to form a first amorphous silicon layer (), and a second step (S) of providing a first gas containing silicon on the substrate () having the first amorphous silicon layer () formed thereon to form a second amorphous silicon layer ().