The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 16, 2023
Filed:
Mar. 11, 2022
Applicant:
Psiquantum, Corp., Palo Alto, CA (US);
Inventors:
Yong Liang, Niskayuna, NY (US);
Vimal Kumar Kamineni, Fremont, CA (US);
Assignee:
PSIQUANTUM, CORP., Palo Alto, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 21/02 (2006.01); H01L 21/28 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02381 (2013.01); H01L 21/0262 (2013.01); H01L 21/02161 (2013.01); H01L 21/02236 (2013.01); H01L 21/28194 (2013.01);
Abstract
A method for removing a native oxide film from a semiconductor substrate includes repetitively depositing layers of germanium on the native oxide and heating the substrate causing the layer of germanium to form germanium oxide, desorbing a portion of the native oxide film. The process is repeated until the oxide film is removed. A subsequent layer of strontium titanate can be deposited on the semiconductor substrate, over either residual germanium or a deposited germanium layer. The germanium can be converted to silicon germanium oxide by exposing the strontium titanate to oxygen.