The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 16, 2023
Filed:
Jan. 12, 2021
Applicant:
International Business Machines Corporation, Armonk, NY (US);
Inventors:
Joshua T. Smith, Croton on Hudson, NY (US);
Benjamin Wunsch, Mt. Kisco, NY (US);
Assignee:
International Business Machines Corporation, Armonk, NY (US);
Attorneys:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01J 21/10 (2006.01); H01J 1/304 (2006.01); H01L 21/3215 (2006.01); H01L 29/417 (2006.01);
U.S. Cl.
CPC ...
H01J 21/105 (2013.01); H01J 1/3042 (2013.01); H01L 21/3215 (2013.01); H01L 29/41725 (2013.01); H01J 2201/319 (2013.01);
Abstract
A technique relates to a semiconductor device. An emitter electrode and a collector electrode are formed in a dielectric layer such that a nanogap separates the emitter electrode and the collector electrode, a portion of the emitter electrode including layers. A channel is formed in the dielectric layer so as to traverse the nanogap. A top layer is formed over the channel so as to cover the channel and the nanogap without filling in the channel and the nanogap, thereby forming a vacuum channel transistor structure.