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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11651925 B1

PDFFull Text
Date of Patent:
May. 16, 2023

Filed:

Jan. 12, 2021

Vacuum channel transistor structures with sub-10 nanometer nanogaps and layered metal electrodes

Applicant:

International Business Machines Corporation, Armonk, NY (US);

Inventors:

Joshua T. Smith, Croton on Hudson, NY (US);

Benjamin Wunsch, Mt. Kisco, NY (US);

Assignee:

International Business Machines Corporation, Armonk, NY (US);

Attorneys:

Cantor Colburn LLP

Stosch Sabo

Primary Examiner:

Mounir S Amer

Assistant Examiner:

Alexander Belousov

Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01J 21/10 (2006.01); H01J 1/304 (2006.01); H01L 21/3215 (2006.01); H01L 29/417 (2006.01);
U.S. Cl.
CPC ...
H01J 21/105 (2013.01); H01J 1/3042 (2013.01); H01L 21/3215 (2013.01); H01L 29/41725 (2013.01); H01J 2201/319 (2013.01);
Abstract

A technique relates to a semiconductor device. An emitter electrode and a collector electrode are formed in a dielectric layer such that a nanogap separates the emitter electrode and the collector electrode, a portion of the emitter electrode including layers. A channel is formed in the dielectric layer so as to traverse the nanogap. A top layer is formed over the channel so as to cover the channel and the nanogap without filling in the channel and the nanogap, thereby forming a vacuum channel transistor structure.

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Smith, Joshua. (2023). Vacuum channel transistor structures with sub-10 nanometer nanogaps and layered metal electrodes (U.S. Patent No. 11651925). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11651925

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