The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 16, 2023

Filed:

May. 15, 2020
Applicant:

Industry-university Cooperation Foundation Hanyang University Erica Campus, Ansan-Si, KR;

Inventors:

Tae Joo Park, Ansan-si, KR;

Dae Hyun Kim, Ansan-si, KR;

Daewoong Kim, Ansan-si, KR;

Tae Jun Seok, Yongin-si, KR;

Hyunsoo Jin, Ansan-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C23C 16/30 (2006.01); H01L 21/02 (2006.01);
U.S. Cl.
CPC ...
C23C 16/305 (2013.01); H01L 21/0262 (2013.01); H01L 21/02568 (2013.01);
Abstract

A method for manufacturing a transition metal-dichalcogenide thin film is provided. The method for manufacturing a transition metal-dichalcogenide thin film can comprise the steps of: preparing a base substrate within a chamber; preparing a precursor comprising a transition metal; repeatedly carrying out, multiple times, a step of providing the precursor on the base substrate and a step of purging the chamber, thereby forming, on the base substrate, a preliminary thin film in which the precursor is adsorbed; and manufacturing a transition metal-dichalcogenide thin film by heat treating the preliminary thin film in a gas atmosphere comprising a chalcogen element.


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