The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 16, 2023
Filed:
May. 01, 2020
Birmingham Technologies, Inc., Arlington, VA (US);
Joseph Birmingham, Arlington, VA (US);
Other;
Abstract
A method for fabricating a single electron transistor is provided. A substrate includes a substantially planar surface with a source electrode, a drain electrode, and a gate electrode thereon, with the source and drain electrodes spaced apart from one another by a gap. The source electrode and the drain electrode are electrified, and a single nanometer-scale conductive particle is electrospray deposited in the gap. The single nanometer-scale conductive particle has an effective size of not greater than 10 nanometers. At least one carbon nanotube is deposited on the substrate and subjected to dielectrophoresis to position the carbon nanotube within 1 nanometer of the single nanometer-scale conductive particle. The at least one carbon nanotube establishes a first connection between the source electrode and the single nanometer-scale conductive particle and a second connection between the drain electrode and the single nanometer-scale conductive particle.