The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 09, 2023

Filed:

Oct. 27, 2020
Applicant:

Tdk Corporation, Tokyo, JP;

Inventors:

Junichi Kimura, Tokyo, JP;

Yukari Inoue, Tokyo, JP;

Assignee:

TDK Corporation, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 41/187 (2006.01); H01L 41/047 (2006.01); C01B 21/072 (2006.01); C01B 21/076 (2006.01);
U.S. Cl.
CPC ...
H01L 41/187 (2013.01); C01B 21/072 (2013.01); C01B 21/076 (2013.01); H01L 41/047 (2013.01); C01P 2002/70 (2013.01); C01P 2004/30 (2013.01); C01P 2004/38 (2013.01);
Abstract

Provided is a piezoelectric thin film device containing: a first electrode layer; and a piezoelectric thin film. The first electrode layer contains a metal Me having a crystal structure. The piezoelectric thin film contains aluminum nitride having a wurtzite structure. The aluminum nitride contains a divalent metal element Md and a tetravalent metal element Mt. [Al] is an amount of Al contained in the aluminum nitride, [Md] is an amount of Md contained in the aluminum nitride, [Mt] is an amount of Mt contained in the aluminum nitride, ([Md]+[Mt])/([Al]+[Md]+[Mt]) is 36 to 70 atom %. Lis a lattice length of the aluminum nitride in a direction that is approximately parallel to a surface of the first electrode layer with which the piezoelectric thin film is in contact, Lis a lattice length of Me in a direction, and Lis longer than L.


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