The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 09, 2023

Filed:

Dec. 06, 2020
Applicant:

Imec Vzw, Leuven, BE;

Inventors:

Jiwon Lee, Leuven, BE;

Pierre Boulenc, Woluwe Saint Lambert, BE;

Kris Myny, Heusden-Zolder, BE;

Assignee:

IMEC VZW, Leuven, BE;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10K 39/32 (2023.01); H01L 27/146 (2006.01); H04N 25/50 (2023.01); H04N 25/79 (2023.01); H10K 19/20 (2023.01); H10K 30/15 (2023.01);
U.S. Cl.
CPC ...
H10K 39/32 (2023.02); H01L 27/14614 (2013.01); H04N 25/50 (2023.01); H04N 25/79 (2023.01); H01L 27/14641 (2013.01); H01L 27/14649 (2013.01); H10K 19/20 (2023.02); H10K 30/152 (2023.02);
Abstract

A photo-sensitive device comprises: an active layer configured to generate charges in response to incident light; a charge transport layer arranged below the active layer, wherein the charge transport layer comprises a first portion and a second portion being laterally displaced in relation to the first portion; a gate separated by a dielectric material from the charge transport layer, wherein said gate is arranged below the first portion and configured to control a potential thereof; and a transfer gate, which is separated by a dielectric material from a transfer portion of the charge transport layer between the first portion and the second portion, wherein the transfer gate is configured to control transfer of accumulated charges in the first portion to the second portion for read-out of detected light.


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