The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 09, 2023
Filed:
Mar. 31, 2020
Applicant:
Silicon Laboratories Inc., Austin, TX (US);
Inventor:
Mohamed M. Elsayed, Austin, TX (US);
Assignee:
Silicon Laboratories Inc., Austin, TX (US);
Primary Examiner:
Int. Cl.
CPC ...
G01R 31/26 (2020.01); G11C 8/08 (2006.01); H01L 21/70 (2006.01); H03K 17/06 (2006.01); G11C 8/00 (2006.01); H03K 19/00 (2006.01); H03K 19/003 (2006.01); H03K 17/16 (2006.01); H03K 19/0185 (2006.01);
U.S. Cl.
CPC ...
H03K 19/0013 (2013.01); H03K 17/162 (2013.01); H03K 19/003 (2013.01); H03K 19/0185 (2013.01); H03K 2217/0036 (2013.01);
Abstract
An apparatus includes an integrated circuit (IC), which includes complementary metal oxide semiconductor (CMOS) circuitry. The CMOS circuitry includes a p-channel transistor network that includes at least one p-channel transistor having a gate-induced drain leakage (GIDL) current. The IC further includes a native metal oxide semiconductor (MOS) transistor coupled to supply a bias voltage to the at least one p-channel transistor to reduce the GIDL current of the at least one p-channel transistor.