The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 09, 2023

Filed:

Jan. 11, 2022
Applicant:

National Yang Ming Chiao Tung University, Hsinchu, TW;

Inventors:

Ching-Yao Liu, Hsinchu, TW;

Yueh-Tsung Hsieh, Hsinchu, TW;

Kuo-Bin Wang, Hsinchu, TW;

Chih-Chiang Wu, Hsinchu County, TW;

Li-Chuan Tang, Taoyuan, TW;

Wei-Hua Chieng, Hsinchu, TW;

Edward Yi Chang, Hsinchu, TW;

Stone Cheng, Hsinchu, TW;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03K 17/081 (2006.01); H03K 17/0814 (2006.01); H03K 17/12 (2006.01); H02M 3/155 (2006.01); H03K 17/687 (2006.01); H02M 3/158 (2006.01); H01L 29/778 (2006.01); G05F 1/56 (2006.01); H01L 29/20 (2006.01);
U.S. Cl.
CPC ...
H03K 17/687 (2013.01); G05F 1/56 (2013.01); H01L 29/7787 (2013.01); H02M 3/158 (2013.01); H01L 29/2003 (2013.01);
Abstract

A power module includes: a GaN transistor, an NMOS transistor, a first capacitor, a first diode and a second diode. The NMOS transistor is electrically connected to the GaN transistor. A negative electrode of the first capacitor is electrically connected to an anode of the first diode and a gate of the GaN transistor. A cathode of the second diode is electrically connected to a gate of the NMOS transistor. The power module further includes a power module control terminal electrically connected to an anode of the first capacitor and an anode of the second diode.


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