The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 09, 2023

Filed:

Jun. 06, 2019
Applicant:

Hamamatsu Photonics K.k., Hamamatsu, JP;

Inventors:

Takahiro Sugiyama, Hamamatsu, JP;

Yuu Takiguchi, Hamamatsu, JP;

Yoshitaka Kurosaka, Hamamatsu, JP;

Kazuyoshi Hirose, Hamamatsu, JP;

Yoshiro Nomoto, Hamamatsu, JP;

Soh Uenoyama, Hamamatsu, JP;

Assignee:

HAMAMATSU PHOTONICS K.K., Hamamatsu, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01S 5/11 (2021.01); H01S 5/042 (2006.01); H01S 5/12 (2021.01); H01S 5/42 (2006.01); H01S 5/026 (2006.01); H01S 5/343 (2006.01); H01S 5/183 (2006.01);
U.S. Cl.
CPC ...
H01S 5/11 (2021.01); H01S 5/04256 (2019.08); H01S 5/42 (2013.01); H01S 5/026 (2013.01); H01S 5/0425 (2013.01); H01S 5/04254 (2019.08); H01S 5/1835 (2013.01); H01S 5/34313 (2013.01); H01S 5/34353 (2013.01); H01S 5/423 (2013.01); H01S 2301/16 (2013.01); H01S 2301/18 (2013.01); H01S 2301/20 (2013.01);
Abstract

The present embodiment relates to a single semiconductor light-emitting element including a plurality of light-emitting portions each of which is capable of generating light of a desired beam projection pattern and a method for manufacturing the semiconductor light-emitting element. In the semiconductor light-emitting element, an active layer and a phase modulation layer are formed on a common substrate layer, and the phase modulation layer includes at least a plurality of phase modulation regions arranged along the common substrate layer. The plurality of phase modulation regions are obtained by separating the phase modulation layer into a plurality of places after manufacturing the phase modulation layer, and as a result, the semiconductor light-emitting element provided with a plurality of light-emitting portions that have been accurately aligned can be obtained through a simple manufacturing process as compared with the related art.


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